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Effect of thermal annealing on the surface of sol-gel prepared oxide film studied by atomic force microscopy and Raman spectroscopy

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Abstract

In this work, we have investigated the surface topography evolution of sol-gel deposited SiO2-SnO2 nanocomposite films annealed in the temperature range 200–600°C. The fractal dimension of atomic force microscopy images of the films was determined by the cube counting method and the triangulation method. The fractal dimension was shown to be an appropriate and easy to use tool for the characterization of nanosized thin film structures. Raman spectroscopy revealed the formation of a SiO2 cage-like structure at 400°C and SnO2 crystallization above 500°C.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University (LETI), Russia, 197376, St. Petersburg, Prof. Popov 5

    A. A. Ponomareva & V. A. Moshnikov

  2. Solid State Electronics Laboratory, TU Dresden, 01062, Dresden, Germany

    A. A. Ponomareva & G. Suchaneck

  3. Department of Physics, Southern Federal University, Russia, 344006, Rostov-on-Don, Bolshaya Sadovaya Str. 105/42

    O. A. Maslova & Yu. I. Yuzyuk

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  1. A. A. Ponomareva
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  2. V. A. Moshnikov
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  3. O. A. Maslova
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  4. Yu. I. Yuzyuk
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Correspondence to A. A. Ponomareva.

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Ponomareva, A.A., Moshnikov, V.A., Maslova, O.A. et al. Effect of thermal annealing on the surface of sol-gel prepared oxide film studied by atomic force microscopy and Raman spectroscopy. Glass Phys Chem 40, 99–105 (2014). https://doi.org/10.1134/S1087659614010192

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