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Narrowband MSM Detector of the Visible Part of the Spectrum Based on a ZnCdSe/ZnSSe/GaAs Heterostructure

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Abstract

The results of experimental studies of photodiodes based on interdigital MSM (metal–semiconductor–metal) Schottky barrier contacts to a ZnCdSe/ZnSSe/GaAs heterobarrier structure are presented. The detector provides a narrowband response (FWHM = 4.3 nm) at a wavelength of 460 nm, a sharp drop in the photosensitivity in the short-wavelength part of the response signal, high ampere-watt sensitivity, and low dark current.

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Funding

This study was carried out as part of a state assignment and with partial financial support from the Russian Foundation for Basic Research (project no. 18-07-00259A).

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Fryazino Branch, Russian Academy of Sciences, 141190, Fryazino, Moscow oblast, Russia

    S. V. Averin, P. I. Kuznetsov, V. A. Zhitov, L. Yu. Zakharov & V. M. Kotov

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  1. S. V. Averin
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  2. P. I. Kuznetsov
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  3. V. A. Zhitov
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  4. L. Yu. Zakharov
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  5. V. M. Kotov
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Correspondence to S. V. Averin.

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Averin, S.V., Kuznetsov, P.I., Zhitov, V.A. et al. Narrowband MSM Detector of the Visible Part of the Spectrum Based on a ZnCdSe/ZnSSe/GaAs Heterostructure. J. Commun. Technol. Electron. 66, 202–205 (2021). https://doi.org/10.1134/S1064226921020029

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  • DOI: https://doi.org/10.1134/S1064226921020029

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