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High spectral selectivity metal-semiconductor-metal photodetector

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Abstract

The results of experimental study of the metal-semiconductor-metal (MSM) photodiode based on ZnCdSe/ZnSSe/GaAs heterobarrier structure are presented. MSM-diode with 2.8 μm Ni-Au interdigitated Schottky barrier contacts, gaps between them of 3 μm, and total detector area of 100 × 100 µm2 have been fabricated and investigated. At a wavelength of 460 nm MSM-diode provides a high spectral selectivity with FWHM of spectral response 4.3 nm, high current sensitivity of 2.27 A/W and low dark current of 200 pA at 30 V bias. The spectral response of the MSM-detector was characterized under various bias conditions. A reduced Schottky barrier height model was adopted to explain the gain mechanism of the MSM-detector under illumination.

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Acknowledgements

We thank P. Kusnetzov for the samples of heterostructures, V. Zhitov and L. Zakharov for the spectral response measurements.

Funding

This study was carried out within the framework of the state task Kotel`nikov IRE RAS.

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Authors and Affiliations

  1. Fryazino branch of the Kotel’nikov Institute of Radioengineering and Electronics of Russian academy of sciences, square of academician Vvedenski 1, 141190, Fryazino, Russia

    S. V. Averin & V. M. Kotov

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  1. S. V. Averin
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  2. V. M. Kotov
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Correspondence to S. V. Averin.

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Averin, S.V., Kotov, V.M. High spectral selectivity metal-semiconductor-metal photodetector. Opt Quant Electron 55, 37 (2023). https://doi.org/10.1007/s11082-022-04085-w

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