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Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, 634050, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & S. M. Dzyadukh

  2. Russian Technological University (MIREA), Moscow, 119454, Russia

    N. A. Kulchitsky

Authors
  1. A. V. Voitsekhovskii
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  2. N. A. Kulchitsky
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  3. S. N. Nesmelov
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  4. S. M. Dzyadukh
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Correspondence to A. V. Voitsekhovskii.

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Original Russian Text © A.V. Voitsekhovskii, N.A. Kulchitsky, S.N. Nesmelov, S.M. Dzyadukh, 2017, published in Uspekhi Prikladnoi Fiziki, 2017, Vol. 5, No. 1, pp. 54–62.

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Voitsekhovskii, A.V., Kulchitsky, N.A., Nesmelov, S.N. et al. Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range. J. Commun. Technol. Electron. 63, 1112–1118 (2018). https://doi.org/10.1134/S1064226918090231

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  • DOI: https://doi.org/10.1134/S1064226918090231

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