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Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe

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Abstract

The voltage dependence of photo-emf in the HgCdTe/SiO 2 /Si 3 N 4 and HgCdTe/AOF MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg 0.78 Cd 0.22 Te were produced on the GaAs substrates by molecular-beam epitaxy. It was found that the type of field dependence of photo-emf is related to the conduction type of the semiconductor used and to the presence of near-surface graded-band layers.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute, Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov & A. P. Kokhanenko

  2. Institute of Semiconductor Physics SB RAS, Russia

    Yu. P. Mashukov, T. I. Zakhar’yash, V. V. Vasil’ev, V. S. Varavin, Yu. G. Sidorov, S. A. Dvoretskii & N. N. Mikhailov

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  1. A. V. Voitsekhovskii
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  2. S. N. Nesmelov
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  3. A. P. Kokhanenko
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  4. Yu. P. Mashukov
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  5. T. I. Zakhar’yash
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  6. V. V. Vasil’ev
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  7. V. S. Varavin
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  8. Yu. G. Sidorov
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  9. S. A. Dvoretskii
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  10. N. N. Mikhailov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 35–39, February, 2005.

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Voitsekhovskii, A.V., Nesmelov, S.N., Kokhanenko, A.P. et al. Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe. Russ Phys J 48, 143–147 (2005). https://doi.org/10.1007/s11182-005-0097-y

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  • DOI: https://doi.org/10.1007/s11182-005-0097-y

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