Abstract
A photorefractive method is investigated as a basis for the contactless complex mapping of the electron and thermal properties of silicon structures. It is shown that the charge-carrier mobility and lifetime, as well as the thermal diffusivity, can be measured locally in a single processing cycle at any place in the bulk of a sample. A procedure for simultaneous measurement of these parameters is developed.
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Original Russian Text © A.L. Filatov, E.M. Korablev, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 4, pp. 498–501.
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Filatov, A.L., Korablev, E.M. Use of the photorefractive effect for complex mapping of electron and thermal parameters of silicon structures in a single processing cycle. J. Commun. Technol. Electron. 52, 468–471 (2007). https://doi.org/10.1134/S1064226907040134
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DOI: https://doi.org/10.1134/S1064226907040134