Abstract
Photoluminescence (PL) imaging has emerged as an important tool for obtaining the spatial variation of the electronic and electrical parameters of Si wafer and solar cells. Since this is a contactless measurement, spatial lifetime maps can be obtained at different stages of processing. This paper consists of two parts. In the first part we describe a low cost PL imaging tool developed at NCPRE. Improvements in image quality using both hardware and software approaches will be presented. In the second part, we present various case studies of how processing affects minority carrier lifetime and series resistance.
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References
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Acknowledgements
The authors would like to acknowledge support received by the National Centre for Photovoltaic Research and Education (NCPRE) through funding from the Ministry of New and Renewable Energy (MNRE), Government of India.
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Sharma, A.K. et al. (2019). Photoluminescence Imaging of Silicon Wafers and Solar Cells for Process, Device Development and Diagnostics. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_54
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DOI: https://doi.org/10.1007/978-3-319-97604-4_54
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