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Features of Optical Gain in Heavily Doped AlxGa1 – xN:Si-Structures

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Abstract

The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

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Funding

This work was carried out within the framework of a state order to the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh & N. V. Fateev

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    I. V. Osinnykh & N. V. Fateev

  3. Novosibirsk State Technical University, 630087, Novosibirsk, Russia

    D. E. Zakrevsky

Authors
  1. P. A. Bokhan
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  2. K. S. Zhuravlev
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  3. D. E. Zakrevsky
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  4. T. V. Malin
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  5. I. V. Osinnykh
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  6. N. V. Fateev
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Corresponding author

Correspondence to D. E. Zakrevsky.

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The authors declare that they have no conflicts of interest.

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Translated by N. Petrov

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Bokhan, P.A., Zhuravlev, K.S., Zakrevsky, D.E. et al. Features of Optical Gain in Heavily Doped AlxGa1 – xN:Si-Structures. Tech. Phys. Lett. 47, 692–695 (2021). https://doi.org/10.1134/S1063785021070178

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  • DOI: https://doi.org/10.1134/S1063785021070178

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