Abstract
As a new functional material, metal halide perovskites provide new possibilities for preparing gain media for nanosemiconductor lasers. This paper reviews the fabrication results of nanosemiconductor lasers based on metal halide perovskite materials. Firstly, three standard metal halide perovskite-based nanosemiconductor lasers are described: thin-film, nanowire, and quantum dot lasers. Under the corresponding gain structure of each laser, the appropriate gain dielectric material is discussed, and its application in the fabrication of nanosemiconductor lasers is discussed. On this basis, the effects of these gain structures and metal halide perovskite materials on the performance of nanosemiconductor lasers and related application progress are analyzed. Finally, the challenges and opportunities of nanosemiconductor lasers based on metal halide perovskite materials are summarized and the future development trend was discussed.
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Acknowledgements
This work was supported by the National Key R&D Program of China (Grant No.2021YFB3201600) and the Key Research Projects of basic scientific research projects of Liaoning Provincial Department of Education (Grant No. JYTZD2023169).
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Ke Xu provided the funding and writing ideas. Honghao Qian wrote the paper. Both authors have read and agreed to the published version of the manuscript.
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Xu, K., Qian, H. Research progress of metal halide perovskites in the preparation of nanosemiconductor lasers. J Mater Sci 59, 8085–8108 (2024). https://doi.org/10.1007/s10853-024-09667-5
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DOI: https://doi.org/10.1007/s10853-024-09667-5