Skip to main content
SpringerLink
Log in

Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Anisotype p-Cu2ZnSnS4/n-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon substrates. Current–voltage characteristics of the heterojunctions are analyzed, and the mechanisms of current transfer are discussed. It is established that forward-biased structures are characterized by both tunneling-recombination processes and space-charge limited mobility of carriers. In reversely biased heterojunctions, space-charge limited currents predominate.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. M. Sze and K. N. Kwok, Physics of Semiconductor Device (Wiley, New Jersey, 2007).

    Google Scholar 

  2. A. L. Fahrenbruch and R. H. Bube, Fundamentals of Solar Cells. Photovoltaic Solar Energy Conversion (Academic, New York, 1983).

    Google Scholar 

  3. M. I. Hossain, Chalcogenide Lett. 9, 231 (2012).

    Google Scholar 

  4. C. J. Persson, Appl. Phys. 107, 053710 (2010).

    Article  Google Scholar 

  5. H. Katagiri, K. Jimbo, S. Jamada, et al., Appl. Phys. Express 1, 041201 (2008).

    Article  ADS  Google Scholar 

  6. K. Wang, O. Gunawang, T. Todorov, et al., Appl. Phys. Lett. 97, 144 (2010).

    Google Scholar 

  7. M. S. Guk, Extended Abstract of Doctoral Dissertation (Inst. Appl. Phys. Acad. Sci. Moldova, Chisinau, 2014).

    Google Scholar 

  8. A. Yusupov, K. Adambaev, and Z. Z. Turaev, Appl. Sol. Energy 51, 311 (2015).

    Article  Google Scholar 

  9. M. Lampert and P. Mark, Injection Currents in Solids (Academic, New York, 1969).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Tashkent Automobile and Road Institute, Tashkent, 100060, Uzbekistan

    A. Yusupov & K. Adambaev

  2. Ulugbek National University of Uzbekistan, Tashkent, 100174, Uzbekistan

    Z. Z. Turaev

  3. Andizhan State University, Andizhan, 710000, Uzbekistan

    S. R. Aliev

  4. Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

    A. Kutlimratov

Authors
  1. A. Yusupov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Adambaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Z. Z. Turaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. R. Aliev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. Kutlimratov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Yusupov.

Additional information

Original Russian Text © A. Yusupov, K. Adambaev, Z.Z. Turaev, S.R. Aliev, A. Kutlimratov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 2, pp. 98–103.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yusupov, A., Adambaev, K., Turaev, Z.Z. et al. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions. Tech. Phys. Lett. 43, 133–135 (2017). https://doi.org/10.1134/S1063785017010291

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785017010291

Search

Navigation