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Electrical Properties of p-CuCoO2/n-Si Heterojunction

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Nanoelectronics, Nanooptics, Nanochemistry and Nanobiotechnology, and Their Applications (NANO 2022)

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Abstract

p-CuCoO2/n-Si heterostructures were produced by radio frequency magnetron sputtering of CuCoO2 thin films on n-Si crystalline substrates. The optical properties of CuCoO2 thin films deposited on glass substrates are studied. The mechanisms of current transfer are analyzed based on temperature dependences of I–V characteristics. The influence of light on the electrical properties of the p-CuCoO2/n-Si heterostructure is determined.

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Authors and Affiliations

  1. Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58002, Ukraine

    D. P. Koziarskyi, I. P. Koziarskyi & E. V. Maistruk

Authors
  1. D. P. Koziarskyi
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  2. I. P. Koziarskyi
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  3. E. V. Maistruk
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Corresponding author

Correspondence to D. P. Koziarskyi .

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Editors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

    Olena Fesenko

  2. Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

    Leonid Yatsenko

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Koziarskyi, D.P., Koziarskyi, I.P., Maistruk, E.V. (2023). Electrical Properties of p-CuCoO2/n-Si Heterojunction. In: Fesenko, O., Yatsenko, L. (eds) Nanoelectronics, Nanooptics, Nanochemistry and Nanobiotechnology, and Their Applications . NANO 2022. Springer Proceedings in Physics, vol 297. Springer, Cham. https://doi.org/10.1007/978-3-031-42708-4_16

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