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Electrical properties of thin-film semiconductor heterojunctions n-TiO2/p-CuInS2

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Anisotype thin-film heterojunctions n-TiO2/p-CuInS2 are fabricated by spray-pyrolysis and dc reactive magnetron sputtering. The electrical and optical properties of thin CuInS2 films deposited by spraypyrolysis in strictly controlled modes are examined. Also, the electrical properties of the Mo/CuInS2 rear contact are studied by means of measurements by the three-probe method. The dominant charge transport mechanism in forward- and reverse-biased thin-film heterojunctions n-TiO2/p-CuInS2 is determined. This mechanism is well interpreted in terms of the tunneling-recombination model via surface states at the heterointerface and defects in the space-charge region.

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Authors and Affiliations

  1. Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 58012, Chernivtsi, Ukraine

    V. V. Brus, I. G. Orletsky, M. I. Ilashchuk & P. D. Maryanchuk

Authors
  1. V. V. Brus
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  2. I. G. Orletsky
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  3. M. I. Ilashchuk
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  4. P. D. Maryanchuk
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Correspondence to V. V. Brus.

Additional information

Original Russian Text © V.V. Brus, I.G. Orletsky, M.I. Ilashchuk, P.D. Maryanchuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1075–1079.

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Brus, V.V., Orletsky, I.G., Ilashchuk, M.I. et al. Electrical properties of thin-film semiconductor heterojunctions n-TiO2/p-CuInS2 . Semiconductors 48, 1046–1050 (2014). https://doi.org/10.1134/S1063782614080077

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  • DOI: https://doi.org/10.1134/S1063782614080077

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