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Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

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Abstract

The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. Yu. Davydov, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova & L. M. Sorokin

  2. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg, Russia

    S. Yu. Davydov

Authors
  1. S. Yu. Davydov
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  2. A. A. Lebedev
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  3. S. P. Lebedev
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  4. A. A. Sitnikova
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  5. L. M. Sorokin
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Corresponding author

Correspondence to S. Yu. Davydov.

Additional information

Original Russian Text © S.Yu. Davydov, A.A. Lebedev, S.P. Lebedev, A.A. Sitnikova, L.M. Sorokin, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 23, pp. 66–71.

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Davydov, S.Y., Lebedev, A.A., Lebedev, S.P. et al. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes. Tech. Phys. Lett. 42, 1153–1155 (2016). https://doi.org/10.1134/S1063785016120051

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  • DOI: https://doi.org/10.1134/S1063785016120051

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