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Growth of semiconductor nanowires at large diffusion lengths

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Abstract

A universal asymptotic expression for the law of nanowire (NW) growth in cases where the diffusion lengths for adatoms on the substrate surface are much greater than the NW radius and the diffusion lengths for adatoms on the side surface of the growing crystal are much greater than the NW length. The main stages of growth, which are characterized by different relations between the NW length and its radius and the growth time, are determined. Possible asymptotic regimes of NW epitaxy are considered, including the cases of exponential growth and limited growth to a certain critical thickness, which depend on the direction of the diffusion flux of adatoms on the side surface of the growing crystal.

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References

  1. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).

    Article  ADS  Google Scholar 

  2. E. I. Givargizov, Vapor Phase Growth of Whisker and Platelet Crystals (Nauka, Moscow, 1977) [in Russian].

    Google Scholar 

  3. V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 43, 1585 (2009) [Semiconductors 43, 1539 (2009)].

    Google Scholar 

  4. V. Ruth and J. R. Hirth, J. Chem. Phys. 41, 31 (1964).

    Google Scholar 

  5. W. Seifert, M. Borgstrom, K. Deppert, et al., J. Cryst. Growth 272, 211 (2004).

    Article  ADS  Google Scholar 

  6. L. Schubert, P. Werner, N. D. Zakharov, et al., Appl. Phys. Lett. 84, 4968 (2004).

    Article  ADS  Google Scholar 

  7. G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 587 (2005) [Semiconductors 39, 557 (2005)].

    Google Scholar 

  8. J. Johansson, C. P. T. Svensson, T. Martensson, et al., J. Phys. Chem. B 109, 13567 (2005).

    Article  Google Scholar 

  9. V. G. Dubrovskii, N. V. Sibirev, R. A. Suris, et al., Fiz. Tekh. Poluprovodn. (St. Peterburg) 40, 1103 (2006) [Semiconductors 40, 1075 (2006)].

    Google Scholar 

  10. M. C. Plante and R. R. LaPierre, J. Cryst. Growh 286, 394 (2006).

    Article  ADS  Google Scholar 

  11. V. G. Dubrovskii and N. V. Sibirev, Pis’ma Zh. Tekh. Fiz. 32(5), 1 (2006) [Tech. Phys. Lett. 32, 185 (2006)].

    Google Scholar 

  12. V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, et al., J. Cryst. Growth 289, 31 (2006).

    Article  ADS  Google Scholar 

  13. V. G. Dubrovskii, N. V. Sibirev, R. A. Suris, et al., Surf. Sci. 601, 4395 (2007).

    Article  ADS  Google Scholar 

  14. V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, et al., Phys. Rev. E 77, 031606 (2008).

    Article  ADS  Google Scholar 

  15. V. G. Dubrovskii, N. V. Sivirev, G. E. Cirlin, et al., Phys. Rev. B 79, 205316 (2009).

    Article  ADS  Google Scholar 

  16. V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, et al., Phys. Rev. B 80, 205305 (2009).

    Article  ADS  Google Scholar 

  17. M. V. Nazarenko, N. V. Sibirev, and V. G. Dubrovskii, Zh. Tekh. Fiz. 81(2), 153 (2011) [Tech. Phys. 56, 311 (2011)].

    Google Scholar 

  18. J. C. Harmand, F. Glas, and G. Patriarche, Phys. Rev. B 81, 235436 (2010).

    Article  ADS  Google Scholar 

  19. X. Zhang, V. G. Dubrovskii, N. V. Sibirev, et al., Nanoscale Res. Lett. 5, 1692 (2010).

    Article  ADS  Google Scholar 

  20. E. Galopin, L. Largeau, G. Pareiarche, et al., Nanotecnology 22, 245606 (2011).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg Academic University, St. Petersburg, 195220, Russia

    V. G. Dubrovskii & M. V. Nazarenko

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. G. Dubrovskii & M. V. Nazarenko

Authors
  1. V. G. Dubrovskii
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  2. M. V. Nazarenko
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Correspondence to M. V. Nazarenko.

Additional information

Original Russian Text © V.G. Dubrovskii, M.V. Nazarenko, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 4, pp. 18–25.

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Dubrovskii, V.G., Nazarenko, M.V. Growth of semiconductor nanowires at large diffusion lengths. Tech. Phys. Lett. 38, 164–167 (2012). https://doi.org/10.1134/S1063785012020228

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  • DOI: https://doi.org/10.1134/S1063785012020228

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