Abstract
Photodiodes sensitive in the wavelength range of 1.1–2.4 μm have been created based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures with a narrow-gap n-GaInAsSb layer (E g ≅ 0.5 eV) grown in the presence of a rare-earth element (holmium). The electron concentration in the narrow-gap layer is n = 1 × 1016 cm−3, which is about one-fourth of that in an analogous structure grown without the rare-earth element. The proposed structure is characterized by increased quantum efficiency and response speed.
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References
Anal. Chem. 28(8), 219 (1956).
N. D. Stoyanov, M. P. Mikhailova, O. V. Andreichuk, K. D. Moiseev, I. A. Andreev, M. A. Afrailov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 467 (2001) [Semiconductors 35, 453 (2001)].
I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 249 (1999) [Semiconductors 33, 216 (1999)].
M. G. Mank and V. M. Andreev, Semicond. Sci. Technol. 18, S191 (2003).
A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, M. P. Mikhailova, M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 33(1), 23 (2007) [Tech. Phys. Lett. 33, 11 (2007)].
A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, M. P. Mikhailova, M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 33(19), 8 (2007) [Tech. Phys. Lett. 33, 809 (2007)].
A. N. Baranov, T. S. Lagunova, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 421 (1993) [Semiconductors 27, 236 (1993)].
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1010 (1999) [Semiconductors 33, 920 (1999)].
B. E. Zhurtanov, N. D. Il’inskaya, A. N. Imenkov, M. P. Mikhailova, K. V. Kalinina, M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 42, 468 (2008) [Semiconductors 42, 458 (2008)].
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Original Russian Text © A.N. Imenkov, B.E. Zhurtanov, A.P. Astakhova, K.V. Kalinina, M.P. Mikhailova, M.A. Sipovskaya, N.D. Stoyanov, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 2, pp. 29–35.
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Imenkov, A.N., Zhurtanov, B.E., Astakhova, A.P. et al. Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range. Tech. Phys. Lett. 35, 67–69 (2009). https://doi.org/10.1134/S1063785009010209
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DOI: https://doi.org/10.1134/S1063785009010209