Abstract
We present the results of experiments on annealing the surface layer of porous silicon by pulsed IR laser radiation. The character of laser-induced modification has been studied using IR spectroscopy and transmission electron microscopy. It is shown that the proposed method can be used to obtain a Si:SiO2 composite.
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Original Russian Text © L.M. Sorokin, V.I. Sokolov, A.P. Burtsev, A.E. Kalmykov, L.V. Grigor’ev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 24, pp. 69–75.
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Sorokin, L.M., Sokolov, V.I., Burtsev, A.P. et al. Laser-induced modification of porous silicon. Tech. Phys. Lett. 33, 1065–1068 (2007). https://doi.org/10.1134/S1063785007120231
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DOI: https://doi.org/10.1134/S1063785007120231