Abstract
The kinetics of terahertz emission from n-type silicon has been studied for a crystal uniaxially deformed at 4.2 K in a strong electric field. It is established that the emission intensity under these conditions grows as a result of an increase in the population of long-lived excited impurity states in the electric field. This increase in the population of impurity levels is related to hot electron trapping via a combined mechanism.
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Original Russian Text © A.M. Musaev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 22, pp. 87–94.
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Musaev, A.M. Field-induced increase in the population of long-lived excited impurity states in silicon. Tech. Phys. Lett. 33, 983–986 (2007). https://doi.org/10.1134/S1063785007110272
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DOI: https://doi.org/10.1134/S1063785007110272