Abstract
We have studied the effect of spontaneous polarization, which is inherent in noncubic silicon carbide (SiC) polytypes, on the characteristics of quantum wells (QWs) formed in the cubic region at the heterojunction. The analysis is performed for various QW models, including triangular, parabolic, and exponential. Conditions for the appearance of a two-dimensional electron gas at the interface are briefly discussed.
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Original Russian Text © S.Yu. Davydov, A.V. Troshin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 22, pp. 56–63.
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Davydov, S.Y., Troshin, A.V. Effect of spontaneous polarization on the energy levels in quantum wells formed at the contact between cubic and noncubic silicon carbide polytypes. Tech. Phys. Lett. 33, 968–971 (2007). https://doi.org/10.1134/S1063785007110235
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DOI: https://doi.org/10.1134/S1063785007110235