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Effect of the thickness of the TiO x /TiO2 layers on their memristor properties

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Abstract

The effect of the layer thickness of the TiO x /TiO2 heterostructure on its memristor properties is investigated. The dependence of the stoichiometry index of the prepared layers on their thickness is analyzed using Auger spectroscopy. The dependence of ratio R off/R on of the resistances in the high- and low-resistance states of a memristor element on the thickness of its layers is nonmonotonic. The highest value of R off/R on = 200 was attained for identical thickness of the TiO x and TiO2 layers, equal to 30 nm.

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Authors and Affiliations

  1. National Research Centre Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182, Russia

    A. V. Emel’yanov, V. A. Demin, I. M. Antropov, G. I. Tselikov, Z. V. Lavrukhina & P. K. Kashkarov

  2. Moscow Institute of Physics and Technology, Institutskaya ul. 9, Dolgoprudnyi, Moscow oblast, 141700, Russia

    V. A. Demin & P. K. Kashkarov

  3. Moscow State University, Moscow, 119991, Russia

    P. K. Kashkarov

Authors
  1. A. V. Emel’yanov
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  2. V. A. Demin
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  3. I. M. Antropov
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  4. G. I. Tselikov
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  5. Z. V. Lavrukhina
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  6. P. K. Kashkarov
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Correspondence to A. V. Emel’yanov.

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Original Russian Text © A.V. Emel’yanov, V.A. Demin, I.M. Antropov, G.I. Tselikov, Z.V. Lavrukhina, P.K. Kashkarov, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 1, pp. 114–117.

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Emel’yanov, A.V., Demin, V.A., Antropov, I.M. et al. Effect of the thickness of the TiO x /TiO2 layers on their memristor properties. Tech. Phys. 60, 112–115 (2015). https://doi.org/10.1134/S1063784215010077

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  • DOI: https://doi.org/10.1134/S1063784215010077

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