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Memristive effect in a nanotubular layer of anodized titanium dioxide

  • Proceedings of the XIV All-Russian School Seminar on Condensed State Physics, Dedicated to the Memory of Academician A. M. Ilyin
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A layer of titanium dioxide (TiO2-NT) nanotubes 500 nm thick with average diameters of 60 nm is grown via anodizing. Memristive behavior typical of synthesized Ti/TiO2-NT/Au structures is observed in full cycles of resistive switching, and during the multiple reading of data. Impedance in the states of low (R LRS ≈ 3 Ohm) and high (R HRS ≈ 180 Ohm) resistance are estimated for the obtained memristors.

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Correspondence to A. S. Vokhmintsev.

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Original Russian Text © A.S. Vokhmintsev, I.A. Weinstein, R.V. Kamalov, I.B. Dorosheva, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 9, pp. 1176–1179.

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Vokhmintsev, A.S., Weinstein, I.A., Kamalov, R.V. et al. Memristive effect in a nanotubular layer of anodized titanium dioxide. Bull. Russ. Acad. Sci. Phys. 78, 932–935 (2014). https://doi.org/10.3103/S1062873814090317

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  • DOI: https://doi.org/10.3103/S1062873814090317

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