Skip to main content
SpringerLink
Log in

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

  • Rapid communication
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Memory devices based on the reversible resistance switching of various materials are attractive for today’s semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO2 single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. International Technology Roadmap for Semiconductors (ITRS, 2006). http://www.itrs.net/reports.html

  2. S.T. Hsu, T.K. Li, N. Awaya, J. Appl. Phys. 101, 024517 (2007)

    Article  ADS  Google Scholar 

  3. A. Beck, J.G. Bednorz, C. Gerber, Ch. Rossel, D. Widmer, Appl. Phys. Lett. 77, 139 (2000)

    Article  ADS  Google Scholar 

  4. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312 (2006)

    Article  ADS  Google Scholar 

  5. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.J. Lee, S.A. Seo, I.K. Yoo, IEEE Electron Device Lett. 26, 719 (2005)

    Article  ADS  Google Scholar 

  6. R. Dong, Q. Wang, L.D. Chen, D.S. Shang, T.L. Chen, X.M. Li, W.Q. Zhang, Appl. Phys. Lett. 86, 172107 (2005)

    Article  ADS  Google Scholar 

  7. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, N. Awaya, Appl. Phys. Lett. 89, 223509 (2006)

    Article  ADS  Google Scholar 

  8. A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004)

    Article  ADS  Google Scholar 

  9. R. Dong, D.S. Lee, W.F. Xiang, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, S.N. Seo, M.B. Pyun, M. Hasan, H.S. Hwang, Appl. Phys. Lett. 90, 042107 (2007)

    Article  ADS  Google Scholar 

  10. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, H. Adachi, Phys. Rev. B 70, 224403 (2004)

    Article  ADS  Google Scholar 

  11. M.J. Rozenberg, I.H. Inoue, M.J. Sánchez, Phys. Rev. Lett. 92, 178302–1 (2004)

    Article  ADS  Google Scholar 

  12. D.S. Lee, D.J. Seong, H.J. Choi, I.H. Jo, R. Dong, W.F. Xiang, S.J. Oh, S.H. Heo, M.S. Jo, D.K. Hwang, H.K. Park, M. Chang, M. Hasan, H.S. Hwang, IEDM Tech. Dig. (2006), p. 797

  13. R. Schaub, E. Wahlstrom, A. Ronnau, E. Lagsgaard, I. Stensgaard, F. Besenbacher, Science 299, 377 (2003)

    Article  ADS  Google Scholar 

  14. M.K. Nowotny, T. Bak, J. Nowotny, J. Phys. Chem. B 110, 16270 (2006)

    Article  Google Scholar 

  15. H.J. Sim, H.J. Choi, D.S. Lee, M. Chang, D.H. Choi, Y.N. Son, E.H. Lee, W.J. Kim, Y.D. Park, I.K. Yoo, H.S. Hwang, IEDM Tech. Dig. (2005), p. 777

  16. H. Pagnia, N. Sotnik, Phys. Status Solidi A 108, 11 (1998)

    Article  ADS  Google Scholar 

  17. A.K. Ray, C.A. Hogarth, Int. J. Electron. 69, 97 (1990)

    Article  Google Scholar 

  18. S.M. Sze, Physics of Semiconductor Devices, 3rd edn. (Wiley, New York, 2007)

    Google Scholar 

  19. H. Yang, D. Lee, M.S. Rahman, M. Hasan, H.-S. Jung, H. Hwang, IEEE Electron Device Lett. 27, 435 (2006)

    Article  ADS  Google Scholar 

  20. D.J. Seong, M.S. Jo, D.S. Lee, H.S. Hwang, Electrochem. Solid-State Lett. 10, H168 (2007)

    Article  Google Scholar 

  21. R. Dong, W.F. Xiang, D.S. Lee, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, M. Chang, M.S. Jo, M. Hasan, H.S. Hwang, Appl. Phys. Lett. 90, 182118 (2007)

    Article  ADS  Google Scholar 

  22. R. Dong, Q. Wang, L.D. Chen, D.S. Shang, T.L. Chen, X.M. Li, W.Q. Zhang, Appl. Phys. A 81, 265 (2005)

    Article  ADS  Google Scholar 

  23. J.R. Jameson, Y. Fukuzumi, Z. Wang, P. Griffin, K. Tsunoda, G.I. Meijer, Y. Nishi, Appl. Phys. Lett. 91, 112101 (2007)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-ku, Gwangju, 500-712, Korea

    R. Dong, D. S. Lee, M. B. Pyun, M. Hasan, H. J. Choi, M. S. Jo, D. J. Seong, M. Chang, S. H. Heo, J. M. Lee, H. K. Park & Hyunsang Hwang

Authors
  1. R. Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. S. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. B. Pyun
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Hasan
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H. J. Choi
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. S. Jo
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. D. J. Seong
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. Chang
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. S. H. Heo
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. J. M. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. H. K. Park
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. Hyunsang Hwang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. Dong.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Dong, R., Lee, D.S., Pyun, M.B. et al. Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory. Appl. Phys. A 93, 409–414 (2008). https://doi.org/10.1007/s00339-008-4782-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-008-4782-x

PACS

Search

Navigation