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Rate of localized gas discharge etching of silicon

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Abstract

The dependence of the etching rate of silicon on the technological, design, and electrophysical parameters that characterize the glowing conditions and the properties of a localized gas discharge is studied. Experiments are performed at a gas pressure of 104–105 Pa and a discharge gap of 50–500 μm. Emission spectroscopy is shown to be an efficient method for controlling the beginning and the end of localized gas discharge etching of different materials.

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Authors and Affiliations

  1. Voronezh State Architectural and Building University, ul. 20-letiya Oktyabrya 84, Voronezh, 394006, Russia

    A. V. Abramov, E. A. Pankratova & I. S. Surovtsev

Authors
  1. A. V. Abramov
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  2. E. A. Pankratova
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  3. I. S. Surovtsev
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Correspondence to A. V. Abramov.

Additional information

Original Russian Text © A.V. Abramov, E.A. Pankratova, I.S. Surovtsev, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 10, pp. 34–38.

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Abramov, A.V., Pankratova, E.A. & Surovtsev, I.S. Rate of localized gas discharge etching of silicon. Tech. Phys. 59, 1452–1456 (2014). https://doi.org/10.1134/S106378421410003X

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  • DOI: https://doi.org/10.1134/S106378421410003X

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