Abstract
The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO2 and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO2 phase, contains silicon oxide species Si2+ and Si3+ with stoichiometric formulas SiO and Si2O3, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.
Similar content being viewed by others
References
L. Rebohle, T. Gebel, H. Frob, H. Reuther, and W. Skorupa, Appl. Surf. Sci. 184, 156 (2001).
L. J. Mitchell, F. Naab, O. W. Holland, J. L. Duggan, and F. D. McDaniel, J. Non-Cryst. Solids 352, 2562 (2006).
A. Pérez-Rodríguez, O. González-Varona, B. Garrido, P. Pellegrino, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, J. Appl. Phys. 94, 254 (2003).
D. I. Tetelbaum, A. N. Mikhaylov, V. K. Vasiliev, A. I. Belov, A. I. Kovalev, D. L. Wainstein, Yu. A. Mendeleva, T. G. Finstad, S. Foss, Y. Golan, and A. Osherov, Surf. Coat. Technol. 203, 2658 (2009).
A. I. Belov, A. N. Mikhaylov, D. E. Nikolitchev, A. V. Boryakov, A. P. Sidorin, A. P. Gratchev, A. V. Ershov, and D. I. Tetelbaum, Semiconductors 44(11), 1450 (2010).
D. Wainstein, A. Kovalev, D. Tetelbaum, A. Mikhaylov, and A. Belov, Surf. Interface Anal. 40, 571 (2008).
J. F. Ziegler, http://www.srim.org
G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault, Semiconductors 36(6), 647 (2002).
K. Sato, T. Izumi, M. Iwase, Y. Show, H. Morisaki, T. Yaguchi, and T. Kamino, Appl. Surf. Sci. 216, 376 (2003).
D. I. Tetelbaum, O. N. Gorshkov, A. P. Kasatkin, A. N. Mikhaylov, A. I. Belov, D. M. Gaponova, and S. V. Morozov, Phys. Solid State 47(1), 13 (2005).
M. P. Seah, in Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, Ed. by D. Briggs and M. P. Seah (Wiley, New York, 1983; Mir, Moscow, 1987), p. 203.
Handbooks of Monochromatic XPS Spectra, Vol. 1: The Elements and Native Oxides, Ed. by B. V. Crist (XPS International LLC, Mountain View, California, United States, 1999).
Handbooks of Monochromatic XPS Spectra, Vol. 2: Commercially Pure Binary Oxides and a Few Common Carbonates and Hydroxides, Ed.by B. V. Crist (XPS International LLC, Mountain View, California, United States, 2005).
XPS/AES software. http://www.xpsdata.com/
N. I. Fainer, M. L. Kosinova, and Yu. M. Rumyantsev, Ross. Khim. Zh. XLV, 101 (2001).
X. L. Wu, Y. Gu, S. J. Xiong, J. M. Zhu, G. S. Huang, X. M. Bao, and G. G. Siu, J. Appl. Phys. 94, 5247 (2003).
M. Nakazawa, S. Kawase, and H. Sekiyama, J. Appl. Phys. 65, 4014 (1989).
C. D. Wagner, A. V. Naumkin, A. K.-V. J. W. Allison, C. J. Powell, J. R. Rumble, Jr., NIST X-Ray Photoelectron Spectroscopy Database; http://srdata.nist.gov/xps.
B. S. Bokshtein, S. Z. Bokshtein, and A. A. Zhukhovitskii, Thermodynamics and Kinetics of Diffusion in Solids (Metallurgiya, Moscow, 1974; Oxonian, New Delhi, 1985).
V. I. Vedeneev, L. V. Gurvich, V. N. Kondrat’ev, V. A. Medvedev, and E. L. Frankevich, Energies of Chemical Bonds. Ionization Potentials and Electron Affinities: A Handbook (Academy of Sciences of the USSR, Moscow, 1962) [in Russian].
D. A. Shirley, Phys. Rev. B: Solid State 5, 4709 (1972).
B. Garrido Fernandez, M. López, C. García, A. érez-Rodríguez, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, J. Appl. Phys. 91, 798 (2002).
J. Y. Fan, X. L. Wu, and P. K. Chu, Prog. Mater. Sci. 51, 983 (2006).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Boryakov, D.E. Nikolitchev, D.I. Tetelbaum, A.I. Belov, A.V. Ershov, A.N. Mikhaylov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 2, pp. 347–359.
Rights and permissions
About this article
Cite this article
Boryakov, A.V., Nikolitchev, D.E., Tetelbaum, D.I. et al. Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation. Phys. Solid State 54, 394–403 (2012). https://doi.org/10.1134/S1063783412020102
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783412020102