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Structure and composition of silicon carbide films synthesized by ion implantation

  • Surface Physics and Thin Films
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Abstract

The mathematical decomposition of the IR absorption spectrum obtained from a Si layer after the C+ ion implantation with an energy of 10 or 40 keV or from a homogeneous SiC0.7 film has demonstrated that fractions of weak elongated Si-C bonds in the amorphous phase, strong shortened Si-C bonds on the surface of small nanocrystals, and tetrahedral Si-C bonds in the crystalline phase (degree of crystallinity) after high-temperature annealing (1250–1400°C) of the layers are equal to 29/29/42, 22/7/71, and 21/31/48%, respectively. A system of SiC2.0, SiO2, SiC0.8, and SiC0.6 layers in the film on the Si substrate has been identified using X-ray reflectometry and the simulation with the Release software. The reflectometry data on fluctuations of the intensity of X-ray reflections in the region of the main maximum have been interpreted in terms of variations in the density over the depth of the layer with a Gaussian distribution of carbon atoms from 2.55 and 2.90 g/cm3 for the SiC0.25 and SiC0.65 layers, respectively, to 3.29 g/cm3 for the SiC1.36 layer.

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Authors and Affiliations

  1. Kazakh-British Technical University, Tole bi 59, Almaty, 050000, Kazakhstan

    K. Kh. Nussupov, N. B. Beisenkhanov, S. K. Zharikov, I. K. Beisembetov, B. K. Kenzhaliev, T. K. Akhmetov & B. Zh. Seitov

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  1. K. Kh. Nussupov
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Correspondence to N. B. Beisenkhanov.

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Original Russian Text © K.Kh. Nussupov, N.B. Beisenkhanov, S.K. Zharikov, I.K. Beisembetov, B.K. Kenzhaliev, T.K. Akhmetov, B.Zh. Seitov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 11, pp. 2231–2245.

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Nussupov, K.K., Beisenkhanov, N.B., Zharikov, S.K. et al. Structure and composition of silicon carbide films synthesized by ion implantation. Phys. Solid State 56, 2307–2321 (2014). https://doi.org/10.1134/S1063783414110237

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