Abstract
The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In x Ga1 − x As and In x Ga1 − x P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In x Ga1 − x As and In x Ga1 − x P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.
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Original Russian Text © B.N. Zvonkov, O.V. Vikhrova, Yu.A. Danilov, Yu.N. Drozdov, A.V. Kudrin, M.V. Sapozhnikov, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 11, pp. 2124–2127.
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Zvonkov, B.N., Vikhrova, O.V., Danilov, Y.A. et al. Effect of compressive and tensile stresses in GaMnAs layers on their magnetic properties. Phys. Solid State 52, 2267–2270 (2010). https://doi.org/10.1134/S1063783410110090
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DOI: https://doi.org/10.1134/S1063783410110090