Abstract
The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium which were found earlier, as well as with theoretical predictions made by different authors.
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Original Russian Text © E.V. Ubyĭvovk, D.K. Loginov, I.Ya. Gerlovin, Yu.K. Dolgikh, Yu.P. Efimov, S.A. Eliseev, V.V. Petrov, O.F. Vyvenko, A.A. Sitnikova, D.A. Kirilenko, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 9, pp. 1818–1823.
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Ubyĭvovk, E.V., Loginov, D.K., Gerlovin, I.Y. et al. Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well. Phys. Solid State 51, 1929–1934 (2009). https://doi.org/10.1134/S1063783409090273
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DOI: https://doi.org/10.1134/S1063783409090273