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Optical lattices of excitons in InGaN/GaN quantum well systems

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
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Abstract

Optical lattices of excitons in periodic systems of InGaN quantum wells with GaN barriers are designed, implemented, and investigated. Due to the collective interaction of quasi-two-dimensional excitons with light and a fairly high binding energy of excitons in GaN, optical Bragg reflection at room temperature is significantly enhanced. To increase the resonance optical response of the system, new structures with two quantum wells in a periodic supercell are designed and implemented. Resonance reflection of 40% at room temperatures for structures with 60 periods is demonstrated.

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Correspondence to V. V. Chaldyshev.

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Original Russian Text © V.V. Chaldyshev, A.S. Bolshakov, E.E. Zavarin, A.V. Sakharov, V.V. Lundin, A.F. Tsatsulnikov, M.A. Yagovkina, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 6–10.

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Chaldyshev, V.V., Bolshakov, A.S., Zavarin, E.E. et al. Optical lattices of excitons in InGaN/GaN quantum well systems. Semiconductors 49, 4–8 (2015). https://doi.org/10.1134/S1063782615010042

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  • DOI: https://doi.org/10.1134/S1063782615010042

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