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Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells

  • XXVIII INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”, MINSK, REPUBLIC OF BELARUS, SEPTEMBER, 2020. EXCITONS IN NANOSTRUCTURES
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Abstract

In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

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FUNDING

This work is supported by the Russian Science Foundation, grant no. 19-72-20039. The calculations were carried out using the facilities of the SPbU Resource Center Computational Center of SPbU.

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Authors and Affiliations

  1. Spin Optics Laboratory, St. Petersburg State University, 198504, Petrodvorets, St. Petersburg, Russia

    E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov & I. V. Ignatiev

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  1. E. S. Khramtsov
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  2. B. F. Gribakin
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  3. A. V. Trifonov
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  4. I. V. Ignatiev
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Correspondence to B. F. Gribakin.

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Khramtsov, E.S., Gribakin, B.F., Trifonov, A.V. et al. Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells. Semiconductors 54, 1503–1505 (2020). https://doi.org/10.1134/S1063782620110135

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  • DOI: https://doi.org/10.1134/S1063782620110135

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