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Sulfide Passivation of InP(100) Surface

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Abstract

Passivation of the n-InP(100) surface with sodium sulfide (Na2S) aqueous solution is analyzed by photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). The room-temperature PL intensity increases essentially even after short treatment with sulfide solution for 1 min. The enhancement in the room-temperature PL intensity after passivation decreases with the increase in the bulk doping level of the semiconductor. Time-resolved PL studies performed at liquid-nitrogen temperature indicate reduction in the surface recombination velocity. This improvement of the PL intensity occurs just after transformation of the native oxide layer consisting mainly of indium phosphates to the passivating layer consisting of indium sulfides and oxides. The surface bands in n-InP(100) remained nearly flat both before and after sulfide passivation.

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Funding

This work was funded by Russian Foundation for Basic Research, project no. 20-03-00523. In addition, M.V.L. is grateful to JSPS for Invitational Fellowships for Research in Japan (Fellowship ID:S19162).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    M. V. Lebedev, Yu. M. Serov, T. V. Lvova & I. V. Sedova

  2. National Institute for Materials Science (NIMS), 305-0044, Tsukuba, Ibaraki, Japan

    R. Endo & T. Masuda

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  1. M. V. Lebedev
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  2. Yu. M. Serov
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  3. T. V. Lvova
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  4. I. V. Sedova
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  5. R. Endo
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  6. T. Masuda
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Correspondence to M. V. Lebedev.

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Lebedev, M.V., Serov, Y.M., Lvova, T.V. et al. Sulfide Passivation of InP(100) Surface. Semiconductors 54, 1843–1846 (2020). https://doi.org/10.1134/S106378262014016X

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  • DOI: https://doi.org/10.1134/S106378262014016X

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