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Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation

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Abstract

The main features of self-catalyzed III–V nanowire growth according to the vapor-liquid-solid mechanism were analyzed using Monte Carlo simulation. The nanowire growth kinetics, flux ratio influence on the nanowire morphology and growth rate were considered. For some growth conditions, the self-equalization effect of metal drop sizes during the self-catalyzed III–V nanowire growth was demonstrated. It is revealed that, only under the adsorption growth mode, all drop sizes reach a single stationary value.

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Funding

This work was supported by the Russian Foundation for Basic Research (grant 18-02-00764).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia

    A. G. Nastovjak, N. L. Shwartz & I. G. Neizvestny

  2. Novosibirsk State Technical University, 630087, Novosibirsk, Russia

    A. G. Usenkova, N. L. Shwartz & I. G. Neizvestny

Authors
  1. A. G. Nastovjak
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  2. A. G. Usenkova
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  3. N. L. Shwartz
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  4. I. G. Neizvestny
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Correspondence to A. G. Nastovjak.

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Nastovjak, A.G., Usenkova, A.G., Shwartz, N.L. et al. Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation. Semiconductors 53, 2106–2109 (2019). https://doi.org/10.1134/S1063782619120194

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  • DOI: https://doi.org/10.1134/S1063782619120194

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