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Limits of III–V Nanowire Growth

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Abstract

The growth kinetics of III–V semiconductor nanowires by a vapor–liquid–solid method is theoretically analyzed. The analysis includes three concurrent processes—the deposition rate of an element of group V, penetration of atoms of group III into the droplet taking into account surface diffusion, and nucleation at the liquid–solid interface. A generalized formula for the vertical growth rate of nanowires is obtained, and it can be limited by one of the three processes. Various growth conditions with Au and Ga catalysts depending on the fluxes of elements of groups III and V and the nanowire radius are analyzed.

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REFERENCES

  1. A. Zhang, G. Zheng, and C. M. Lieber, Nanowires: Building Blocks for Nanoscience and Nanotechnology (Springer, Switzerland, 2016).

    Book  Google Scholar 

  2. V. G. Dubrovskii, in Semiconductors and Semimetals, Ed. by A. Fontcuberta i Morral, S. A. Dayeh, and C. Jagadish (Academic, Burlington, 2015), Vol. 93, p. 1.

    Google Scholar 

  3. E. Dimakis, U. Jahn, M. Ramsteiner, A. Tahraoui, J. Grandal, X. Kong, O. Marquardt, A. Trampert, H. Riechert, and L. Geelhaar, Nano Lett. 14, 2604 (2014).

    Article  ADS  Google Scholar 

  4. G. E. Cirlin, A. D. Bouravleuv, I. P. Soshnikov, Yu. B. Samsonenko, V. G. Dubrovskii, E. M. Arakcheeva, E. M. Tanklevskaya, and P. Werner, Nanoscale Res. Lett. 5, 360 (2010).

    Article  ADS  Google Scholar 

  5. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).

    Article  ADS  Google Scholar 

  6. F. Matteini, V. G. Dubrovskii, D. Ruffer, G. Tütüncüoğlu, Y. Fontana, and A. Fontcuberta i Morral, Nanotecnology 26, 105603 (2015).

    Article  ADS  Google Scholar 

  7. F. Glas, Phys. Rev. B 74, 121302(R) (2006).

  8. K. W. Ng, W. S. Ko, T. T. D. Tran, R. Chen, M. V. Nazarenko, F. Lu, V. G. Dubrovskii, M. Kamp, A. Forchel, and C. J. Chang-Hasnain, ACS Nano 7, 100 (2013).

    Article  Google Scholar 

  9. V. G. Dubrovskii, N. V. Sibirev, and G. E. Cirlin, Tech. Phys. Lett. 30, 682 (2004).

    Article  ADS  Google Scholar 

  10. G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, and V. M. Ustinov, Semiconductors 39, 557 (2005).

    Article  ADS  Google Scholar 

  11. V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, G. E. Cirlin, and V. M. Ustinov, J. Cryst. Growth 289, 31 (2006).

    Article  ADS  Google Scholar 

  12. F. Glas, M. R. Ramdani, G. Patriarche, and J. C. Harmand, Phys. Rev. B 88, 195304 (2013).

    Article  ADS  Google Scholar 

  13. J. Johansson and M. H. Magnusson, J. Cryst. Growth 525, 125192 (2019).

    Article  Google Scholar 

  14. V. G. Dubrovskii and Yu. Yu. Hervieu, J. Cryst. Growth 401, 431 (2014).

    Article  ADS  Google Scholar 

  15. V. G. Dubrovskii, J. Cryst. Growt 440, 62 (2016).

    Article  ADS  Google Scholar 

  16. V. G. Dubrovskii and J. Grecenkov, Cryst. Growth Des. 15, 340 (2015).

    Article  Google Scholar 

  17. F. Glas, J. Appl. Phys. 108, 073506 (2010).

    Article  ADS  Google Scholar 

  18. V. G. Dubrovskii, Phys. Status Solidi B 171, 345 (1992).

    Article  ADS  Google Scholar 

  19. F. Glas, Phys. Status Solidi B 247, 254 (2010).

    Article  ADS  Google Scholar 

  20. Q. Gao, V. G. Dubrovskii, P. Caroff, J. Wong-Leung, L. Li, Y. Guo, L. Fu, H. H. Tan, and C. Jagadish, Nano Lett. 16, 4361 (2016).

    Article  ADS  Google Scholar 

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Funding

This work was supported by the Russian Science Foundation, project no. 19-72-30004.

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Authors and Affiliations

  1. St. Petersburg State University, 199034, St. Petersburg, Russia

    V. G. Dubrovskii

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. G. Dubrovskii

  3. St. Petersburg University of Information Technologies, Mechanics, and Optics (ITMO University), 197101, St. Petersburg, Russia

    A. S. Sokolovskii & H. Hijazi

Authors
  1. V. G. Dubrovskii
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  2. A. S. Sokolovskii
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  3. H. Hijazi
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Correspondence to V. G. Dubrovskii.

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The authors declare that they have no conflict of interest.

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Translated by I. Obrezanova

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Dubrovskii, V.G., Sokolovskii, A.S. & Hijazi, H. Limits of III–V Nanowire Growth. Tech. Phys. Lett. 46, 859–863 (2020). https://doi.org/10.1134/S1063785020090035

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  • DOI: https://doi.org/10.1134/S1063785020090035

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