Skip to main content
SpringerLink
Log in

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

  • XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p–n junction are presented. The main manufacturing feature is the use of two separate epitaxial growth processes when forming the transistor structure. The transistor part containing the drain, drift, and gate regions is grown by liquid-phase epitaxy. Metalorganic gas-phase epitaxy is used to form the channel and source regions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.

Similar content being viewed by others

REFERENCES

  1. F. Roccaforte, P. Fiorenza, G. Greco, R. L. Nigro, F. Giannazzo, F. Iucolano, and M. Saggio, Microelectron. Eng. 187–188, 66 (2018).

    Article  Google Scholar 

  2. T. Paul Chow, in Proceedings of the 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (Blacksburg, Virginia, USA, 2015), p. 402.

  3. Y. Zhang, A. Dadgar, and T. Palacios, J. Phys. D: Appl. Phys. 51, 273001 (2018).

    Article  ADS  Google Scholar 

  4. D. Ji, A. Agarwal, H. Li, W. Li, S. Keller, and S. Chowdhury, IEEE Electron Dev. Lett. 39, 863 (2018).

    Article  ADS  Google Scholar 

  5. D. Ji, C. Gupta, A. Agarwal, S. H. Chan, C. Lund, W. Li, S. Keller, U. K. Mishra, and S. Chowdhury, IEEE Electron Dev. Lett. 39, 711 (2018).

    Article  ADS  Google Scholar 

  6. V. L. Kryukov, E. V. Kryukov, L. A. Meerovich, S. S. Strel’chenko, and K. A. Titivkin, Naukoemk. Tekhnol. 15 (2), 42 (2014).

    Google Scholar 

  7. B. Jayant Baliga, Gallium Nitride and Silicon Carbide Power Devices (World Scientific, Singapore, 2017).

    Book  Google Scholar 

Download references

Funding

Investigations are performed in the scope of fulfillment of the state order for the Institute for Physics of Microstructures, Russian Academy of Sciences, theme no. 0035-2014-0205. The equipment of the Joint Use Center “Physics and Technology of Micro- and Nanostructures” was used in the work.

Author information

Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, E. V. Skorokhodov & V. I. Shashkin

  2. OOO “MeGa Epitech”, 248033, Kaluga, Russia

    V. L. Krukov & S. S. Strelchenko

Authors
  1. N. V. Vostokov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. M. Daniltsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. A. Kraev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. L. Krukov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. V. Skorokhodov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. S. Strelchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. V. I. Shashkin
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. V. Vostokov.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by N. Korovin

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Vostokov, N.V., Daniltsev, V.M., Kraev, S.A. et al. Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction. Semiconductors 53, 1279–1281 (2019). https://doi.org/10.1134/S1063782619100245

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782619100245

Keywords:

Search

Navigation