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Field-Effect Transistors 2

Ga2O3 Field-Effect Transistors for Power Switching and Radiation-Hard Electronics

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

Ga2O3 has exploded onto the semiconductor landscape for next-generation power electronics because its enticing material properties, most notably a large critical field strength stemming from its ultrawide bandgap, promise miniaturized circuits and systems with high conversion efficiency. Intense pursuit of Ga2O3 power devices galvanized by the demonstration of a high-voltage Ga2O3 field-effect transistor (FET) in 2012 has brought about tremendous advancements in this new technology, whose strong radiation tolerance and high thermal stability also befit harsh-environment applications that impose stringent reliability requirements. This chapter reviews the designs and properties of various types of depletion- and enhancement-mode Ga2O3 FETs—which have predominantly been lateral devices—for power switching and radiation-hard electronics. The development of vertical Ga2O3 transistors based on a low-cost, highly manufacturable ion implantation doping process will also be presented.

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Acknowledgements

This work was partially supported by Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Next-generation power electronics” (funding agency: New Energy and Industrial Technology Development Organization).

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Authors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, 184-8795, Japan

    Man Hoi Wong & Masataka Higashiwaki

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  1. Man Hoi Wong
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  2. Masataka Higashiwaki
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Correspondence to Man Hoi Wong .

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  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Wong, M.H., Higashiwaki, M. (2020). Field-Effect Transistors 2. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_32

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