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Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

On the basis of data on X-ray structural analysis performed by the method of reciprocal-space mapping and investigations using secondary-ion mass spectrometry and transmission electron microscopy, it is shown that vertical compressive stresses also arise in a multilayer epitaxial heterostructure comprised of a step-graded metamorphic buffer along with lateral compressive stresses. The cause of the appearance of vertical stresses is the effect of interlayer hardening, which arises due to the deceleration of fragments of glide dislocations by interphase boundaries. Analysis performed within the framework of the linear theory of elasticity shows that the elastically stressed state of the buffer steps is similar to the state that can be achieved as a result of a two-stage deformation process: bulk and biaxial compression. Bulk compression leads to large energy expenditures in the formation of the structure of the buffer steps, which is reflected, in particular, in violation of the coherence between the dislocation-free and the underlying layers.

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Funding

The work was performed as part of the State Task for 2019 no. 075-00816-19-00 of December 27, 2018, for the Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences.

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Authors and Affiliations

  1. Mokerov Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    A. N. Aleshin, A. S. Bugaev, O. A. Ruban & V. V. Saraikin

  2. National University of Science and Technology “MISiS“, 119049, Moscow, Russia

    N. Yu. Tabachkova & I. V. Shchetinin

Authors
  1. A. N. Aleshin
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  2. A. S. Bugaev
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  3. O. A. Ruban
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  4. V. V. Saraikin
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  5. N. Yu. Tabachkova
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  6. I. V. Shchetinin
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Correspondence to A. N. Aleshin.

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Translated by V. Bukhanov

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Aleshin, A.N., Bugaev, A.S., Ruban, O.A. et al. Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate. Semiconductors 53, 1066–1074 (2019). https://doi.org/10.1134/S1063782619080025

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  • DOI: https://doi.org/10.1134/S1063782619080025

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