Abstract
The kinetics of the photoresponse of microwave photoconductivity (9 GHz, TE101-type cavity) on excitation by laser light pulses with a wavelength of 337 nm and a duration of 8 ns in copper-deficient Cu1 –x(In0.7Ga0.3)Se2 (CIGS) (0 < x ≤ 0.4) solid solutions with the chalcopyrite structure is investigated in a wide light intensity range. With an increase in the laser radiation density to ~5 × 1014 photon/cm2 per pulse, the photoresponse acquires, along with the previously revealed skin effect, the effect of the filling of traps created by VCu vacancies and Cu+2 · VCu defect associates, the concentration of which increases with a decrease in x in the CIGS formula.
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ACKNOWLEDGMENTS
The study was carried out using a USF “Unique scientific facility for measuring the photogenerated carrier lifetimes by the microwave photoconductivity method in the frequency range of 9 GHz”.
The study was supported by the Russian Foundation for Basic Research, project no. 16-08-01234 and state task no. 01201361850.
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Novikov, G.F., Rabenok, E.V., Orishina, P.S. et al. Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions. Semiconductors 53, 304–309 (2019). https://doi.org/10.1134/S106378261903014X
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DOI: https://doi.org/10.1134/S106378261903014X