Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 85, No. 2, pp. 248–255, March–April, 2018.
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Svitsiankou, I.E., Pavlovskii, V.N., Lutsenko, E.V. et al. Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors. J Appl Spectrosc 85, 267–273 (2018). https://doi.org/10.1007/s10812-018-0643-3
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DOI: https://doi.org/10.1007/s10812-018-0643-3