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Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.

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Authors and Affiliations

  1. Sedakov Scientific Research Institute of Measurement Systems, 603950, Nizhny Novgorod, Russia

    Yu. A. Kabalnov & A. N. Trufanov

  2. Lobachevsky University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    S. V. Obolensky

Authors
  1. Yu. A. Kabalnov
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  2. A. N. Trufanov
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  3. S. V. Obolensky
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Corresponding author

Correspondence to S. V. Obolensky.

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Translated by N. Korovin

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Kabalnov, Y.A., Trufanov, A.N. & Obolensky, S.V. Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures. Semiconductors 53, 368–374 (2019). https://doi.org/10.1134/S1063782619030084

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  • DOI: https://doi.org/10.1134/S1063782619030084

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