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Inhomogeneous dopant distribution in III–V nanowires

  • XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
  • Published:
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Abstract

We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.

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Authors and Affiliations

  1. St. Petersburg Academic University, St. Petersburg, 194021, Russia

    E. D. Leshchenko & V. G. Dubrovskii

  2. ITMO University, St. Petersburg, 197101, Russia

    E. D. Leshchenko & V. G. Dubrovskii

  3. Ioffe Institute, St. Petersburg, 194021, Russia

    V. G. Dubrovskii

Authors
  1. E. D. Leshchenko
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  2. V. G. Dubrovskii
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Correspondence to V. G. Dubrovskii.

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Original Russian Text © E.D. Leshchenko, V.G. Dubrovskii, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1480–1483.

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Leshchenko, E.D., Dubrovskii, V.G. Inhomogeneous dopant distribution in III–V nanowires. Semiconductors 51, 1427–1430 (2017). https://doi.org/10.1134/S1063782617110173

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  • DOI: https://doi.org/10.1134/S1063782617110173

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