Abstract
A kinetic model of growth of nanowires of III–V semiconductor compounds (including nitride ones) in the absence of metal catalyst is proposed; these conditions correspond to the methods of selective epitaxy or self-induced growth. A stationary solution for the nanowire growth rate is obtained, which indicates that the growth can be limited by not only the kinetics of III-group element with allowance for the surface diffusion (as was suggested earlier), but also the flow of the V-group element. Different modes are characterized by radically different dependences of the growth rate on the nanowire radius. Under arsenicenriched conditions, a typical dependence with a maximum and decay at large radii (limited by the gallium adatom diffusion) is observed. Under gallium-enriched conditions, there is a transition to the growth rate that is practically independent of the radius and linearly increases with an increase in the arsenic flow.
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Original Russian Text © V.G. Dubrovskii, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 23, pp. 49–53.
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Dubrovskii, V.G. Model of selective growth of III–V nanowires. Tech. Phys. Lett. 41, 1136–1138 (2015). https://doi.org/10.1134/S1063785015120044
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DOI: https://doi.org/10.1134/S1063785015120044