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Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…)

  • XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
  • Published:
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Abstract

The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration ΔN Cu with decreasing relative volume density of van der Waals gaps D VdW = s –1 and with increasing package plyness s and package thickness ξ1 under variations in the composition of ternary alloys is revealed.

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Authors and Affiliations

  1. Baikov Institute of Metallurgy and Material Science, Russian Academy of Sciences, Moscow, 119334, Russia

    M. A. Kretova, M. A. Korzhuev & E. S. Avilov

Authors
  1. M. A. Kretova
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  2. M. A. Korzhuev
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  3. E. S. Avilov
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Corresponding author

Correspondence to M. A. Korzhuev.

Additional information

Original Russian Text © M.A. Kretova, M.A. Korzhuev, E.S. Avilov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 7, pp. 937–939

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Kretova, M.A., Korzhuev, M.A. & Avilov, E.S. Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…). Semiconductors 51, 898–901 (2017). https://doi.org/10.1134/S1063782617070193

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  • DOI: https://doi.org/10.1134/S1063782617070193

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