Abstract
The causes of the “charge-carrier density collapse”, i.e., a sharp increase in the equilibrium charge-carrier density n, p = 1 × 1019 → (2–5) × 1020 cm–3 in going from binary alloys such as GeTe and Bi2Te3 to the family of ternary alloys [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n [m, n = 0, 1, 2…) are discussed. The phenomenon is associated with the positional disordering of heterovalent cations (Ge+2, Sn+2, Pb+2 ↔ Bi+3, Sb+3) in the cation sublattice of ternary alloys. The phenomenon is not observed during the disordering of isovalent cations (Bi+3 ↔ Sb+3) or anions (Te–2 ↔ Se–2).
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Original Russian Text © M.A. Korzhuev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 7, pp. 963–965.
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Korzhuev, M.A. Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)] m [(Bi,Sb)2(Te,Se)3] n (m, n = 0, 1, 2…). Semiconductors 51, 924–927 (2017). https://doi.org/10.1134/S1063782617070181
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DOI: https://doi.org/10.1134/S1063782617070181