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Valence-band offsets in strained SiGeSn/Si layers with different tin contents

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Admittance spectroscopy is used to study hole states in Si0.7–y Ge0.3Sn y /Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–y Ge0.3Sn y layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–y Ge0.3Sn y heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–y Ge0.3Sn y layers and Si on the tin content is described by the expression ΔE V exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev & A. I. Nikiforov

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    A. A. Bloshkin

  3. National Research Tomsk State University, pr. Lenina 36, Tomsk, 634050, Russia

    A. I. Yakimov & A. I. Nikiforov

  4. Novosibirsk State Technical University, pr. K. Marx 20, Novosibirsk, 630073, Russia

    V. V. Murashov

Authors
  1. A. A. Bloshkin
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  2. A. I. Yakimov
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  3. V. A. Timofeev
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  4. A. R. Tuktamyshev
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  5. A. I. Nikiforov
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  6. V. V. Murashov
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Correspondence to A. A. Bloshkin.

Additional information

Original Russian Text © A.A. Bloshkin, A.I. Yakimov, V.A. Timofeev, A.R. Tuktamyshev, A.I. Nikiforov, V.V. Murashov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 3, pp. 342–347.

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Bloshkin, A.A., Yakimov, A.I., Timofeev, V.A. et al. Valence-band offsets in strained SiGeSn/Si layers with different tin contents. Semiconductors 51, 329–334 (2017). https://doi.org/10.1134/S1063782617030058

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  • DOI: https://doi.org/10.1134/S1063782617030058

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