Abstract
An algorithm for calculating the parameters of the electron–phonon interaction of the EL2 trap has been developed and implemented based on the example of GaAs. Using the obtained parameters, the field dependences of the probabilities of nonradiative transitions from the trap and reverse currents of the GaAs p–n junctions are calculated, which are in good agreement with the experimental data.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Lutz, H. Schlangenotto, U. Scheuermann, and R. Doncker, Semiconductor Power Devices (Springer, Heidelberg, Dordrecht, London, New York, 2011).
S. V. Bulyarskii and N. S. Grushko, Generation-Recombination Processes in Active Elements (Mosk. Gos. Univ., Moscow, 1997) [in Russian].
Chih-Thing Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).
S. I. Pekar, Usp. Fiz. Nauk 50, 197 (1953).
S. I. Pekar, Studies in Crystal Electron Theory (Gostekhizdat, Moscow, 1951) [in RUssian].
A. S. Davydov, Zh. Eksp. Teor. Fiz. 24, 397 (1953).
M. A. Krivoglaz, Zh. Eksp. Teor. Fiz. 25, 191 (1954).
S. F. Timashov, Sov. Phys. Solid State 14, 136 (1972).
S. F. Timashov, Sov. Phys. Solid State 16, 520 (1974).
F. I. Dalidchik, Sov. Phys. JETP 47, 247 (1978).
R. Passler, Phys. Status Solidi 85, 203 (1978).
S. Makram-Ebeid, Appl. Phys. Lett. 37, 464 (1980).
S. Makram-Ebeid and M. Lannoo, Phys. Rev. 25, 6406 (1982).
S. Makram-Ebeid and M. Lannoo, Phys. Rev. Lett. 48, 1281 (1982).
V. N. Abakumov, I. A. Merkulov, V. I. Perel’, and I. N. Yassievich, Sov. Phys. JETP 62, 853 (1985).
V. Karpus and V. I. Perel’, Sov. Phys. JETP 64, 1376 (1986).
V. A. Gergel’, E. A. Il’ichev, A. V. Tarnavskii, et al., Sov. Phys. Semicond. 25, 1125 (1991).
S. V. Bulyarski, N. S. Grushko, and A. V. Zhuko., J. Exp. Theor. Phys. 89, 547 (1999).
S. V. Bulyarski, N. S. Grushko, and A. V. Zhuko., J. Exp. Theor. Phys. 91, 945 (2000).
S. V. Bulyarski, N. S. Grushko, and A. V. Zhukov, Semiconductors 34, 40 (2000).
S. V. Bulyarski and A. V. Zhukov, Semiconductors 35, 539 (2001).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Zhukov, 2016, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2016, Vol. 21, No. 1, pp. 21–27.
Rights and permissions
About this article
Cite this article
Zhukov, A.V. The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions. Semiconductors 50, 1734–1737 (2016). https://doi.org/10.1134/S1063782616130145
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616130145