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Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

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Abstract

We report on the results of investigations of carrier transport in GaAs structures doped with the EL2 deep donor centers and Cr acceptor levels for ionizing radiation detectors and ultrafast photoelectric switches. Structures of three configurations: p–i–n, n–i–n, and p–i–p, are examined. A system of differential equations for the carrier temperature and Poisson’s and continuity equations is solved using commercial software. It is found that, choosing the barrier-layer type, one can control the electric-field-strength uniformity in the structures. It is shown that the p–i–p structures exhibit the best uniformity of the electric-field strength.

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 20-38-90037.

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Authors and Affiliations

  1. Tomsk State University, 634050, Tomsk, Russia

    M. G. Verkholetov & I. A. Prudaev

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  1. M. G. Verkholetov
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  2. I. A. Prudaev
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Correspondence to M. G. Verkholetov.

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The authors declare that they have no conflict of interest.

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Translated by E. Bondareva

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Verkholetov, M.G., Prudaev, I.A. Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers. Semiconductors 55, 705–709 (2021). https://doi.org/10.1134/S1063782621080200

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