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Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy

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Abstract

The results of electron microscopy studies of an epitaxial InAlAs layer on a GaAs(100) substrate are reported. It is established that there exist misfit dislocations at the interface between the materials and there are residual strains distorting the lattice in the layer. From the measurements of lattice parameters in the directions parallel and orthogonal to the growth direction away from misfit dislocations, the local nominal lattice parameter of the layer is calculated and the relative content of indium is determined.

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Authors and Affiliations

  1. National Research University of Electronic Technology MIET, Zelenograd, Moscow, 124498, Russia

    M. V. Lovygin, N. I. Borgardt & R. L. Volkov

  2. Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    A. S. Bugaev

  3. IV Physical Institute, Göttingen University, D-37077, Gottingen, Germany

    M. Seibt

Authors
  1. M. V. Lovygin
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  2. N. I. Borgardt
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  3. A. S. Bugaev
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  4. R. L. Volkov
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  5. M. Seibt
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Corresponding author

Correspondence to M. V. Lovygin.

Additional information

Original Russian Text © M.V. Lovygin, N.I. Borgardt, A.S. Bugaev, R.L. Volkov, M. Seibt, 2016, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2015, Vol. 20, No. 4, pp. 431–439.

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Lovygin, M.V., Borgardt, N.I., Bugaev, A.S. et al. Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy. Semiconductors 50, 1753–1758 (2016). https://doi.org/10.1134/S1063782616130066

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  • DOI: https://doi.org/10.1134/S1063782616130066

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