Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
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The results of electron microscopy studies of an epitaxial InAlAs layer on a GaAs(100) substrate are reported. It is established that there exist misfit dislocations at the interface between the materials and there are residual strains distorting the lattice in the layer. From the measurements of lattice parameters in the directions parallel and orthogonal to the growth direction away from misfit dislocations, the local nominal lattice parameter of the layer is calculated and the relative content of indium is determined.
Keywordsgallium arsenide indium aluminum arsenide molecular beam epitaxy misfit dislocations tetragonal distortion transmission electron microscopy
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- 2.J. Motohisa, K. Tomioka, B. Hua, et al., in Advances in III–V Semiconductor Nanowires and Nanodevices, Ed. by J. Li, D. Wang, and R. R. LaPierre (Bentham Science, 2011), p.178.Google Scholar
- 3.Z. I. Alferov, V. M. Andreev, and V. D. Rumyantsev, in High-Efficient Low-Cost Photovoltaics. Recent Developments, Ed. by V. Petrova-Koch, R. Hezel, and A. Goetzberg (Berlin, Springer, Heidelberg, 2009), p.225.Google Scholar
- 5.Transmission Electron Microscopy Characterization of Nanomaterials, Ed. by C. S. S. R. Kumar (Springer, Berlin, Heidelberg, 2014), p.716.Google Scholar
- 7.D. B. Williams and C. B. Carter, Transmission Electron Microscopy, A Textbook for Materials Science (Springer Science and Business Media, New York, 2009), p.832.Google Scholar
- 8.A. Rosenauer, Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State (Springer, Berlin, Heidelberg, 2003), p.238.Google Scholar