Skip to main content
SpringerLink
Log in

Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Undoped, uniformly Si-doped, and δ-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111)A-oriented GaAs substrates at a temperature of 230°C are studied. The As4 pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As4 flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 59, 3276 (1991).

    Article  ADS  Google Scholar 

  2. Z. Liliental-Weber, W. Swider, K. M. Yu, J. Kortright, F. W. Smith, and A. R. Calawa, Appl. Phys. Lett. 58, 2153 (1991).

    Article  ADS  Google Scholar 

  3. Z. Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. W. Smith, J. Electron. Mater. 22, 1465 (1993).

    Article  ADS  Google Scholar 

  4. M. Missous, Microelectron. J. 27, 393 (1996).

    Article  Google Scholar 

  5. Z. Liliental-Weber, G. Cooper, R. Mariella, and C. Kocot, J. Vac. Sci. Technol. B 9, 2323 (1991).

    Article  Google Scholar 

  6. M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, and R. Krause- Rehberg, J. Appl. Phys. 83, 561 (1998).

    Article  ADS  Google Scholar 

  7. M. H. Chang, J.-W. Pan, J.-I. Chyi, K. C. Hsieh, and T.-E. Nee, Appl. Phys. Lett. 72, 587 (1998).

    Article  ADS  Google Scholar 

  8. K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, and A. C. Warren, J. Vac. Sci. Technol. B 10, 812 (1991).

    Article  Google Scholar 

  9. H. Fujioka, E. R. Weber, and A. K. Verma, Appl. Phys. Lett. 66, 2834 (1995).

    Article  ADS  Google Scholar 

  10. V. V. Chaldyshev, Mater. Sci. Eng. B 88, 195 (2002).

    Article  Google Scholar 

  11. N. A. Bert, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, and V. V. Tret’yakov, Semicond. Sci. Technol. 12, 51 (1997).

    Article  ADS  Google Scholar 

  12. T. M. Cheng, C. V. Chang, A. Chin, and M. F. Huang, Appl. Phys. Lett. 64, 2517 (1994).

    Article  ADS  Google Scholar 

  13. V. V. Chaldyshev, M. Ya. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Semiconductors 43, 1078 (2009).

    Article  ADS  Google Scholar 

  14. M. V. Baidakova, N. A. Bert, V. V. Chaldyshev, V.N.Nevedomsky, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Acta Crystallogr. B 69, 30 (2013).

    Article  Google Scholar 

  15. M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, P. D. Kirchner, J. M. Woodall, and A. C. Warren, Appl. Phys. Lett. 61, 177 (1992).

    Article  ADS  Google Scholar 

  16. G. B. Galiev, V. G. Mokerov, V. V. Saraikin, Yu. V. Slepnev, G. I. Shagimuratov, R. M. Imamov, and E. M. Pashaev, Tech. Phys. 46, 411 (2001).

    Article  Google Scholar 

  17. G. Galiev, V. Kaminskii, D. Milovzorov, L. Velihovskii, and V. Mokerov, Semicond. Sci. Technol. 17, 120 (2002).

    Article  ADS  Google Scholar 

  18. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen, and T. Tanahashi, J. Appl. Phys. 76, 914 (1994).

    Article  ADS  Google Scholar 

  19. R. Notzel, L. Daweritz, and K. Ploog, Phys. Rev. B 46, 4736 (1992).

    Article  ADS  Google Scholar 

  20. D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, and P. P. Maltsev, Semiconductors 49, 911 (2015).

    Article  ADS  Google Scholar 

  21. T. Ohachi, J. M. Feng, K. Asai, M. Uwani, M. Tateuchi, P. O. Vaccaro, and K. Fujita, Microelectron. J. 30, 471 (1999).

    Article  Google Scholar 

  22. L. Pavesi, N. H. Ky, J. D. Ganiére, F. K. Reinhart, N. Baba-Ali, I. Harrison, B. Tuck, and M. Henini, J. Appl. Phys. 71, 2225 (1992).

    Article  ADS  Google Scholar 

  23. I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L.G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, and S. E. Toropov, Semiconductors 37, 1047 (2003).

    Article  ADS  Google Scholar 

  24. H. K. Nguyen and F. K. Reinhart, J. Appl. Phys. 83, 718 (1998).

    Article  ADS  Google Scholar 

  25. M. H. Zhang, Y. F. Zhang, Q. Huang, C. L. Bao, J. M. Sun, and J. M. Zhou, J. Cryst. Growth 209, 37 (2000).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    G. B. Galiev, E. A. Klimov, S. S. Pushkarev, D. V. Lavrukhin & P. P. Maltsev

  2. National Research Nuclear University “MEPhI”, Moscow, 115409, Russia

    M. M. Grekhov

Authors
  1. G. B. Galiev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. A. Klimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. M. Grekhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. S. Pushkarev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. D. V. Lavrukhin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. P. Maltsev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to G. B. Galiev.

Additional information

Original Russian Text © G.B. Galiev, E.A. Klimov, M.M. Grekhov, S.S. Pushkarev, D.V. Lavrukhin, P.P. Maltsev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 195–203.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Galiev, G.B., Klimov, E.A., Grekhov, M.M. et al. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates. Semiconductors 50, 195–203 (2016). https://doi.org/10.1134/S1063782616020081

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782616020081

Keywords

Search

Navigation