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High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

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Abstract

A simple mathematical model of 4H:SiC sharp-recovery drift diodes with a p +-p-n 0-n + structure. With this model, the limiting electrical parameters of high-voltage (2–10 kV) pulse generators built around these diodes are theoretically estimated.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    P. A. Ivanov & I. V. Grekhov

Authors
  1. P. A. Ivanov
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  2. I. V. Grekhov
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Correspondence to P. A. Ivanov.

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Original Russian Text © P.A. Ivanov, I.V. Grekhov, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 6, pp. 111–117.

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Ivanov, P.A., Grekhov, I.V. High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters. Tech. Phys. 60, 897–902 (2015). https://doi.org/10.1134/S1063784215060092

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  • DOI: https://doi.org/10.1134/S1063784215060092

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