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Behavior of the Fe impurity in Hg3In2Te6 crystals

  • Electronic Properties of Semiconductors
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Abstract

Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at Ec–0.69 eV in Hg3In2Te6 crystals. When light is absorbed by Fe2+ impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe2+ centers.

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Authors and Affiliations

  1. Fed’kovich National University, Chernivtsy, 58000, Ukraine

    O. G. Grushka, A. I. Savchuk, S. N. Chupyra & S. V. Bilichuk

Authors
  1. O. G. Grushka
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  2. A. I. Savchuk
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  3. S. N. Chupyra
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  4. S. V. Bilichuk
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Corresponding author

Correspondence to O. G. Grushka.

Additional information

Original Russian Text © O.G. Grushka, A.I. Savchuk, S.N. Chupyra, S.V. Bilichuk, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 913–915.

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Grushka, O.G., Savchuk, A.I., Chupyra, S.N. et al. Behavior of the Fe impurity in Hg3In2Te6 crystals. Semiconductors 49, 892–894 (2015). https://doi.org/10.1134/S106378261507009X

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  • DOI: https://doi.org/10.1134/S106378261507009X

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