Abstract
The specific features of how nitride HEMT heterostructures are produced by NH3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 108−1 × 109 cm−2. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH3-MBE with an extremely high ammonia flux are demonstrated.
Similar content being viewed by others
References
S. Lamba et al., Appl. Phys. Lett. 102, 191604 (2013).
S. I. Petrov, A. N. Alexeev, D. M. Krasovitsky, and V. P. Chaly, Phys. Status Solidi C 9, 562 (2012).
H. M. Ng et al., Appl. Phys. Lett. 73, 821 (1998).
J. S. Speck et al., Appl. Phys. Lett. 100, 072107 (2012).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.N. Alexeev, D.M. Krasovitsky, S.I. Petrov, V.P. Chaly, V.V. Mamaev, V.G. Sidorov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 1, pp. 94–97.
Rights and permissions
About this article
Cite this article
Alexeev, A.N., Krasovitsky, D.M., Petrov, S.I. et al. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures. Semiconductors 49, 92–94 (2015). https://doi.org/10.1134/S1063782615010029
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615010029