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Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology

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Abstract

Differential Hall effect metrology (DHEM) was used to accurately and effectively evaluate the carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 and P implanted poly-Si layers after RTA (750–950 °C) and CO2 laser (115–135 W) annealing. Microstructure was characterized by transmission electron microscopy (TEM), total dopant concentration was measured by secondary ion mass spectrometer (SIMS). After implantation, the amorphous-Si (a-Si) surface was found to recover fully by RTA annealing, however a residual a-Si layer remained at the surface after CO2 laser annealing. The carrier concentration and active ratio at the a-Si regrowth region was higher than deeper into the samples. The active ratio could reach ~ 100% at the regrowth region for the CO2 laser annealed samples, but the mobility values deteriorated due to impurity scattering. Away from the regrowth region near the surface, RTA could produce higher carrier concentration and active ratio compared to CO2 laser annealing. The suitable carrier concentration value was ~ E + 19 #/cm3 to obtain relatively high mobility of ~ 40 cm2/V s for the BF2 and P implanted poly-Si. The resistivity was related to the carrier concentration and to the presence of the a-Si residue at the surface. It was demonstrated that DHEM in conjunction with SIMS and TEM can be successfully employed to evaluate, in detail, the electrical properties in ultra-shallow junctions of poly-Si and to correlate these electrical properties to process conditions.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by Ministry of Science and Technology, Taiwan (Grant Nos. MOST 110-2221-E-492-002 and MOST 110-2119-M-002-018–MBK).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

    Fa-Yan Lee & YewChung Sermon Wu

  2. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan

    Chia-He Chang & Kun-Lin Lin

  3. Active Layer Parametrics (ALP) Inc., Scotts Valley, CA, USA

    Abhijeet Joshi & Bulent M. Basol

Authors
  1. Fa-Yan Lee
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  2. YewChung Sermon Wu
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  3. Abhijeet Joshi
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  4. Bulent M. Basol
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  6. Kun-Lin Lin
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Contributions

Conceptualization, FYL and KLL; Investigation, FYL and CHC; Methodology, FYL and CHC; Supervision, YSW and KLL; Writing—original draft, FYL and KLL; Writing—review & editing, BMB and AJ. All authors have read and agreed to the published version of the manuscript.

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Correspondence to YewChung Sermon Wu or Kun-Lin Lin.

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Lee, FY., Wu, Y.S., Joshi, A. et al. Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology. J Mater Sci: Mater Electron 33, 16272–16285 (2022). https://doi.org/10.1007/s10854-022-08520-2

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